MP03/260-14 데이터 시트보기 (PDF) - Dynex Semiconductor

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MP03/260-14

Dual Diode Modules

Dynex Semiconductor 

MP03 XX 260 Series

SURGE RATINGS - PER ARM

Symbol

IFSM

I2t

Parameter

Surge (non-repetitive) forward current

I2t for fusing

Conditions

10ms half sine; VR = 0

Tj = 150˚C

VR = 50% VRRM

10ms half sine; VR = 0

Tj = 150˚C

VR = 50% VRRM

THERMAL & MECHANICAL RATINGS

Symbol

Rth(j-c)

Rth(c-hs)

Tvj

Tsto

V

isol

Parameter

Thermal resistance - junction to case

per Diode

Thermal resistance - case to heatsink

per Diode

Virtual junction temperature

Storage temperature range

Isolation voltage

Conditions

dc

halfwave

3 phase

Mounting torque = 5Nm

with mounting compound

Commoned terminals to base plate

AC RMS, 1min, 50Hz

CHARACTERISTICS

Symbol

VFM

IRM

VTO

r

T

Parameter

Forward voltage

Peak reverse current

Threshold voltage

On-state slope resistance

Conditions

At 600A, Tcase = 25oC

At VRRM, Tj = 150oC

At Tvj = 150oC

At Tvj = 150oC

Max. Units

8100

A

6500

A

328000 A2s

211000 A2s

Max.

0.21

Units

oC/W

0.22 oC/W

0.23 oC/W

0.05 oC/W

150

oC

-40 to 150 oC

2.5

kV

Max.

1.3

Units

V

30

mA

0.84

V

0.667 mΩ

2/9

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