2SC1969 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SC1969 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC1969
DESCRIPTION
·High Power Gain-
: Gpe≥12dB,f= 27MHz, PO= 16W
·High Reliability
APPLICATIONS
·Designed for 10~14 watts output power class AB amplifiers
applications in HF band.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
www.iscsemi.cn PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage RBE= ∞
Emitter-Base Voltage
VALUE UNIT
60
V
25
V
5
V
Collector Current
6
A
Collector Power Dissipation
@TC=25℃
PC
Collector Power Dissipation
@Ta=25℃
20
W
1.7
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-a
Rth j-c
Thermal Resistance,Junction to Ambient 73.5 ℃/W
Thermal Resistance,Junction to Case
6.25 ℃/W
isc Website：www.iscsemi.cn
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