74HCT1G08-Q100 데이터 시트보기 (PDF) - NXP Semiconductors.

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74HCT1G08-Q100

2-input AND gate

NXP Semiconductors. 

NXP Semiconductors

74HC1G08-Q100; 74HCT1G08-Q100

2-input AND gate

Table 8. Dynamic characteristics …continued

GND = 0 V; tr = tf  6.0 ns; All typical values are measured at Tamb = 25 C. For test circuit see Figure 6

Symbol Parameter

Conditions

40 C to +85 C

40 C to +125 C Unit

Min Typ Max Min

Max

CPD

power dissipation VI = GND to VCC  1.5 V

capacitance

[2] -

21

-

-

-

pF

[1] tpd is the same as tPLH and tPHL.

[2] CPD is used to determine the dynamic power dissipation PD (W).

PD = CPD  VCC2  fi +  (CL  VCC2  fo) where:

fi = input frequency in MHz

fo = output frequency in MHz

CL = output load capacitance in pF

VCC = supply voltage in Volts

 (CL  VCC2  fo) = sum of outputs

12. Waveforms

A, B input

Y output

VM

tPHL

VM

tPLH

mna116

PULSE

VI

GENERATOR

VCC

VO

DUT

RT

CL

mna101

Fig 5.

For 74HC1G08-Q100: VM = 0.5  VCC; VI = GND to VCC

For 74HCT1G08-Q100: VM = 1.3 V; VI = GND to 3.0 V

The input (A and B) to output (Y) propagation

delays

Fig 6.

Test data is given in Table 8. Definitions for test circuit:

CL = Load capacitance including jig and probe

capacitance

RT = Termination resistance should be equal to the

output impedance Zo of the pulse generator

Test circuit for measuring switching times

74HC_HCT1G08_Q100

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 2 — 16 August 2012

© NXP B.V. 2012. All rights reserved.

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