APM4953K 데이터 시트보기 (PDF) - Anpec Electronics

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APM4953K

Dual P-Channel enhancement Mode MOSFET

Anpec Electronics 

APM4953K

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol

Parameter

VDSS

VGSS

ID*

IDM*

IS*

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Diode Continuous Forward Current

VGS=-10V

TJ

Maximum Junction Temperature

TSTG Storage Temperature Range

PD* Power Dissipation for Single Operation

RθJA* Thermal Resistance-Junction to Ambient

Note:

*Surface Mounted on 1in2 pad area, t ≤ 10sec.

TA=25°C

TA=100°C

Rating

-30

±25

-4.9

-20

-2

150

-55 to 150

2

0.8

62.5

Unit

V

A

A

°C

W

°C/W

Electrical Characteristics

(T

A

=

25°C

unless

otherwise

noted)

Symbol

Parameter

Test Condition

APM4953K

Unit

Min. Typ. Max.

Static Characteristics

BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA

-30

V

IDSS Zero Gate Voltage Drain Current

VDS=-24V, VGS=0V

TJ=85°C

-1

µA

-30

VGS(th) Gate Threshold Voltage

VDS=VGS, IDS=250µA

-1 -1.5 -2

V

IGSS Gate Leakage Current

VGS=±25V, VDS=0V

±100 nA

RDS(ON) a Drain-Source On-state Resistance

VSDa Diode Forward Voltage

VGS=-10V, IDS=-4.9A

VGS=-4.5V, IDS=-3.6A

ISD=-1.7A, VGS=0V

53 60

mΩ

80 95

-0.7 -1.3 V

Gate Charge Characteristics b

Qg Total Gate Charge

Qgs Gate-Source Charge

Qgd Gate-Drain Charge

VDS=-15V, VGS=-10V,

IDS=-4.9A

22.6 30

4.7

nC

2

Copyright  ANPEC Electronics Corp.

2

Rev. B.1 - Mar., 2005

www.anpec.com.tw

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