2SB1237 데이터 시트보기 (PDF) - ROHM Semiconductor
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2SB1237 Datasheet PDF : 5 Pages
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2SB1132 / 2SA1515S / 2SB1237
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
−40
V
Collector-emitter voltage
VCEO
−32
V
Emitter-base voltage
VEBO
−5
V
Collector current
−1
A(DC)
IC
−2
A(Pulse) ∗1
0.5
2SB1132
Collector power
dissipation
2SA1515S
PC
2
0.3
∗2
W
2SB1237
1
∗3
Junction temperature
Tj
150
C
Storage temperature
Tstg
−55 to +150
C
∗1 Single pulse, Pw=100ms
∗2 When mounted on a 40+ 40+ 0.7 mm ceramic board.
∗3 Printed circuit board, 1.7 mm thick, collector copper plating 100mm2 or larger.
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Collector-base breakdown voltage
BVCBO −40
Collector-emitter breakdown voltage
BVCEO −32
Emitter-base breakdown voltage
BVEBO −5
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage
VCE(sat)
−
DC current
transfer ratio
2SB1132, 2SB1237
120
hFE
2SA1515S
120
Transition frequency
fT
−
Output capacitance
∗ Measured using pulse current.
Cob
−
Typ.
−
−
−
−
−
−0.2
−
−
150
20
Max.
−
−
−
−0.5
−0.5
−0.5
390
390
−
30
Unit
V
V
V
μA
μA
V
−
−
MHz
pF
Conditions
IC= −50μA
IC= −1mA
IE= −50μA
VCB= −20V
VEB= −4V
IC/IB= −500mA/−50mA
∗
∗
VCE= −3V, IC= −0.1A
VCE= −5V, IE=50mA, f=30MHz
VCB= −10V, IE=0A, f=1MHz
Packaging specifications and hFE
Package
Code
Type
hFE Basic ordering unit (pieces)
2SB1132 QR
2SA1515S QR
2SB1237 QR
hFE values are classified as follows :
Item
Q
R
hFE
120 to 270 180 to 390
T100
1000
−
−
Taping
TP
5000
−
−
TU2
2500
−
−
Data Sheet
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○c 2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.C
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