IRLR9343 데이터 시트보기 (PDF) - International Rectifier
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IRLR9343 Datasheet PDF : 10 Pages
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DIGITAL AUDIO MOSFET
PD - 95850
IRLR9343
IRLU9343
Features
l Advanced Process Technology
l Key Parameters Optimized for Class-D Audio
Amplifier Applications
l Low RDSON for Improved Efficiency
l Low Qg and Qsw for Better THD and Improved
Efficiency
l Low Qrr for Better THD and Lower EMI
l 175°C Operating Junction Temperature for
Ruggedness
l Repetitive Avalanche Capability for Robustness and
Reliability
l Multiple Package Options
IRLU9343-701
Key Parameters
VDS
-55
V
RDS(ON) typ. @ VGS = -10V
93
m:
RDS(ON) typ. @ VGS = -4.5V
150
m:
Qg typ.
31
nC
TJ max
175
°C
D
G
D-Pak
IRLR9343
I-Pak
IRLU9343
I-Pak Leadform 701
S
IRLU9343-701
Refer to page 10 for package outline
Description
This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
Absolute Maximum Ratings
Parameter
VDS
Drain-to-Source Voltage
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
Power Dissipation
PD @TC = 100°C
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Clamping Pressure h
Thermal Resistance
Parameter
RθJC
Junction-to-Case g
RθJA
Junction-to-Ambient (PCB Mounted) gj
RθJA
Junction-to-Ambient (free air) g
Max.
-55
±20
-20
-14
-60
79
39
0.53
-40 to + 175
–––
Typ.
–––
–––
–––
Max.
1.9
50
110
Units
V
A
W
W/°C
°C
N
Units
°C/W
Notes through are on page 10
www.irf.com
1
4/1/04
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