IRLR9343 데이터 시트보기 (PDF) - International Rectifier

부품명

상세내역

제조사

IRLR9343

DIGITAL AUDIO MOSFET

International Rectifier 

IRLR/U9343 & IRLU9343-701

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BVDSS

∆ΒVDSS/∆TJ

RDS(on)

VGS(th)

∆VGS(th)/∆TJ

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

-55 ––– ––– V VGS = 0V, ID = -250µA

––– -52 ––– mV/°C Reference to 25°C, ID = -1mA

––– 93 105 mΩ VGS = -10V, ID = -3.4A e

––– 150 170

VGS = -4.5V, ID = -2.7A e

-1.0 ––– ––– V VDS = VGS, ID = -250µA

––– -3.7 ––– mV/°C

IDSS

IGSS

gfs

Qg

Qgs

Qgd

Qgodr

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

––– ––– -2.0 µA VDS = -55V, VGS = 0V

––– ––– -25

VDS = -55V, VGS = 0V, TJ = 125°C

––– ––– -100 nA VGS = -20V

––– ––– 100

VGS = 20V

5.3 ––– ––– S VDS = -25V, ID = -14A

––– 31 47

VDS = -44V

––– 7.1 –––

VGS = -10V

––– 8.5 –––

ID = -14A

––– 15 –––

See Fig. 6 and 19

td(on)

Turn-On Delay Time

––– 9.5 –––

VDD = -28V, VGS = -10V e

tr

Rise Time

––– 24 –––

ID = -14A

td(off)

Turn-Off Delay Time

––– 21 ––– ns RG = 2.5Ω

tf

Fall Time

––– 9.5 –––

Ciss

Input Capacitance

––– 660 –––

VGS = 0V

Coss

Output Capacitance

––– 160 ––– pF VDS = -50V

Crss

Reverse Transfer Capacitance

––– 72 –––

ƒ = 1.0MHz,

See Fig.5

Coss

Effective Output Capacitance

––– 280 –––

VGS = 0V, VDS = 0V to -44V

LD

Internal Drain Inductance

––– 4.5 –––

Between lead,

nH 6mm (0.25in.)

LS

Internal Source Inductance

––– 7.5 –––

from package

and center of die contact f

Avalanche Characteristics

Parameter

EAS

Single Pulse Avalanche Energyd

IAR

Avalanche Current i

EAR

Repetitive Avalanche Energy i

Typ.

Max.

–––

120

See Fig. 14, 15, 17a, 17b

Units

mJ

A

mJ

Diode Characteristics

Parameter

IS @ TC = 25°C Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) c

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

Min.

–––

–––

–––

–––

–––

Typ.

–––

–––

–––

57

120

Max. Units

Conditions

-20

MOSFET symbol

D

A showing the

-60

integral reverse

G

p-n junction diode.

S

-1.2 V TJ = 25°C, IS = -14A, VGS = 0V e

86 ns TJ = 25°C, IF = -14A

180 nC di/dt = 100A/µs e

2

www.irf.com

Share Link: