STPS41H100CR 데이터 시트보기 (PDF) - STMicroelectronics
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STPS41H100CR Datasheet PDF : 6 Pages
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STPS41H100CG/CT/CR
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
0
Tj(°C)
25
50
75
100
125
150
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values).
IM(A)
300
250
200
150
100
50 IM
0
1.E-03
t
δ=0.5
t(s)
1.E-02
1.E-01
Tc=25°C
Tc=75°C
Tc=125°C
1.E+00
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6 δ = 0.5
0.5
0.4 δ = 0.2
0.3 δ = 0.1
0.2
Single pulse
0.1
0.0
1.E-03
1.E-02
tp(s)
T
1.E-01
δ=tp/T
tp
1.E+00
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
IR(mA)
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
Tj=50°C
1.E-03
1.E-04
0
Tj=25°C
VR(V)
10 20 30 40 50 60 70 80 90 100
Fig. 8: Junction capacitance versus reverse voltage
applied (typical values).
C(nF)
10.0
F=1MHz
Vosc =30mV
Tj=25°C
1.0
0.1
1
VR(V)
10
100
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