2SA1096 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SA1096 Datasheet PDF : 2 Pages
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J.E.\i£,u
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
iJ-'ioaueti, line.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SA1096
DESCRIPTION
• High Collector-Emitter Breakdown Voltage-
V(BR)CEo= -50V (Min)
• Good Linearity of hFE
• Complement to Type 2SC2497
APPLICATIONS
• Designed for low-frequency power amplification
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-70
V
VCEO Collector-Emitter Voltage
-50
V
VEBO Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25-C
PC
Total Power Dissipation
@ TC=25'C
Tj
Junction Temperature
-3
A
1.2
W
5
150
"C
Tstg Storage Temperature Range
-55-150 'C
1
PIN 1.BMITTER
2.COLLECTOR
3. BASE
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t
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1 23
m in
DIM MEN MAX
A 10,70 10.95
B 7,70 7.90
C 2.60 2.80
D 0.66 0.36
F 3.10 3.30
G 4.43 4.68
H 2.00 2.20
J 1.35 1.55
K 15.30 16.30
0 3.70 3.90
R 0.40 0,60
V 1.17 1.37
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Intbrmation furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time ofgoing
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
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