ILD1 데이터 시트보기 (PDF) - Vishay Semiconductors
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ILD1 Datasheet PDF : 11 Pages
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ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
Reverse current
Capacitance
Thermal resistance, junction to lead
OUTPUT
IF = 60 mA
VR = 6 V
VR = 0 V, f = 1 MHz
VF
IR
CO
TthJL
1.25
1.65
V
0.01
10
μA
25
pF
750
K/W
Collector emitter capacitance
Collector emitter leakage current
Saturation voltage, collector emitter
DC forward current gain
DC forward current gain saturated
Thermal resistance, junction to lead
COUPLER
VCE = 5 V, f = 1 MHz
CCE
VVCE = 10 V
ICEO
IC = 1 mA, IB = 20 μA
VCESAT
VCE = 10 V, IB = 20 μA
hFE
200
VCE = 0.4 V, IB = 20 μA
hFEsat
120
Rthjl
6.8
pF
5
50
nA
0.25
0.4
V
650
1800
400
600
500
K/W
Capacitance (input to output)
VIO = 0 V, f = 1 MHz
CIO
0.8
pF
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
IC/IF
(collector emitter
saturated)
IF =10 mA, VCE = 0.4 V
IF =10 mA, VCE = 10 V
ILD1
CTRCEsat
ILQ1
CTRCEsat
ILD2
CTRCEsat
ILQ2
CTRCEsat
ILD5
CTRCEsat
ILQ5
CTRCEsat
ILD1
CTRCE
20
ILQ1
CTRCE
20
ILD2
CTRCE
100
ILQ2
CTRCE
100
ILD5
CTRCE
50
ILQ5
CTRCE
50
TYP.
75
75
170
170
100
100
80
80
200
200
130
130
MAX.
300
300
500
500
400
400
UNIT
%
%
%
%
%
%
%
%
%
%
%
%
Rev. 1.8, 28-Jun-11
3
Document Number: 83646
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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