2SB766A 데이터 시트보기 (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

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2SB766A

TRANSISTOR(PNP)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

2SB7 66A

TRANSISTOR(PNP)

SOT-89

FEATURES

z Large collector power dissipation PC

z Complementary to 2SD874A

1. BASE

2. COLLECTOR

3. EMITTER

1

2

3

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

TJ

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

-60

-50

-5

-1

500

150

-55-150

Units

V

V

V

A

mW

℃

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol Test conditions

MIN

Collector-base breakdown voltage

V(BR)CBO Ic=-10μA,IE=0

-60

Collector-emitter breakdown voltage

V(BR)CEO Ic=-2mA,IB=0

-50

Emitter-base breakdown voltage

V(BR)EBO IE=-10μA,IC=0

-5

Collector cut-off current

ICBO

VCB=-20V,IE=0

Emitter cut-off current

IEBO

VEB=-4V,IC=0

DC current gain

hFE(1) VCE=-10V,IC=-500mA

85

hFE(2) VCE=-5V,IC=-1A

50

Collector-emitter saturation voltage

VCE(sat) IC=-500mA,IB=-50mA

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

VBE(sat)

fT

Cob

IC=-500mA,IB=-50mA

VCE=-10V,IC=-50mA,f=200MHz

VCB=-10V,IE=0,f=1MHz

TYP

-0.2

-0.85

200

20

MAX

-0.1

-0.1

340

UNIT

V

V

V

μA

μA

-0.4

V

-1.2

V

MHz

30

pF

CLASSIFICATION OF hFE(1)

Rank

Range

MAKING

Q

85-170

BQ

R

120-240

BR

S

170-340

BS

１　

JinYu

semiconductor

www.htsemi.com

Ｄａｔｅ：２０１１／０５

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