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WS3412S8P 데이터 시트보기 (PDF) - Shenzhen Winsemi Microelectronics Co., Ltd

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WS3412S8P
WINSEMI
Shenzhen Winsemi Microelectronics Co., Ltd WINSEMI
WS3412S8P Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
WS3412 Product Description
Electrical Characteristics (Unless otherwise specifiedTA=25VCC=8V)
Symbol
Parameter
Conditions
Supply Voltage Section
Vcc_clamp
VCC Clamping Voltage
Icc_clamp
VCC Clamping Current
VCC_ST
VCC Start Up Voltage
VCC Rise
Vuvlo_HYS
VCC Under Voltage
Latch Out Hysteresis
VCC Falling
Is t
Start Up Current
VCC<VCC_ST-0.5V
Iop
Operation Current
Current Sensor Section
Vocp
Current Sensor Voltage
Threshold
TLEB
Leading Edge Blanking
TDELAY
Turn Off Delay Time
Loop Compensation Section
VREF
Internal Reference Voltage
VCL
Comp Low Clamp Voltage
VCH
Internal Driver Secion
Toff_min
Min. Demagnetization Time
Ton_max
Max. On Time
Feedback input Section
VFB
OVP Threshold Voltage
VZCD
Zero Crossing Checking Threshold
Internal HV MOSFET
RDSON
HV MOS ON Resistance
VDS
Drain to Source voltage
Over Temperature Section
TSD
Thermal Shut Down Temperature
TSD_HYS
Thermal Shut Down Hysteresis
Min Typ Max
7.8 8.5 9.3
5
7.5
1.5
70 100
400
1
350
200
194 200 206
1.5
4
3
20
1.6
0.2
6.5
550
160
30
Units
V
mA
V
V
uA
uA
V
ns
ns
mV
V
V
us
us
V
V
ohm
V
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
www.winsemi.com Tel : 0755-82506288 Fax : 0755-82506299
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
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