SGS5N60RUF 데이터 시트보기 (PDF) - Fairchild Semiconductor

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SGS5N60RUF

Short Circuit Rated IGBT

Fairchild Semiconductor 

700

Common Emitter

V = 0V, f = 1MHz

GE

600

T = 25℃

C

500

400

Cies

300

200

Coes

100

Cres

0

1

10

Collector - Emitter Voltage, VCE [V]

Fig 7. Capacitance Characteristics

Common Emitter

V = 300V, V = ± 15V

CC

GE

I = 5A

C

T = 25℃ ━━

C

T = 125℃ ------

C

Toff

Tf

Toff

Tf

100

10

100

Gate Resistance, RG [Ω ]

Fig 9. Turn-Off Characteristics vs.

Gate Resistance

Common Emitter

V =±

GE

15V,

R

G

=

40Ω

TC = 25℃ ━━

T = 125℃ ------

C

100

Ton

Tr

10

3

4

5

6

7

8

9

10

Collector Current, IC [A]

Fig 11. Turn-On Characteristics vs.

Collector Current

©2001 Fairchild Semiconductor Corporation

Common Emitter

V = 300V, V = ± 15V

CC

GE

IC = 5A

TC = 25℃ ━━

100

T = 125℃ ------

C

Ton

Tr

10

10

100

Gate Resistance, RG [Ω ]

Fig 8. Turn-On Characteristics vs.

Gate Resistance

1000

Eoff

Eon

100

Eoff

10

10

Common Emitter

VCC = 300V, VGE = ± 15V

IC = 5A

T = 25℃ ━━

C

TC = 125℃ ------

100

Gate Resistance, RG [Ω ]

Fig 10. Switching Loss vs. Gate Resistance

1000

Common Emitter

VGE = ± 15V, RG = 40Ω

T = 25℃ ━━

C

T = 125℃ ------

C

Toff

Tf

Toff

Tf

100

3

4

5

6

7

8

9

10

Collector Current, IC [A]

Fig 12. Turn-Off Characteristics vs.

Collector Current

SGS5N60RUF Rev. A

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