SVF5N60D 데이터 시트보기 (PDF) - Silan Microelectronics
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SVF5N60D Datasheet PDF : 10 Pages
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SVF5N60T/F/D/MJ_Datasheet
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Characteristics
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current
TC=25°C
ID
TC=100°C
Drain Current Pulsed
IDM
Power Dissipation(TC=25°C)
-Derate above 25°C
PD
Single Pulsed Avalanche Energy (Note 1) EAS
Operation Junction Temperature Range
TJ
Storage Temperature Range
Tstg
Ratings
SVF5N60T/D/MJ
SVF5N60F
600
±30
5
3.1
20
120
40
0.96
0.32
242
-55～+150
-55～+150
Unit
V
V
A
A
W
W/°C
mJ
°C
°C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
RθJC
Thermal Resistance, Junction-to-Ambient
RθJA
SVF5N
60T
1.04
62.5
Ratings
SVF5N SVF5N
60D
60MJ
1.04
1.00
110
110
SVF5N
60F
3.13
120
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Test conditions
VGS=0V, ID=250µA
VDS=600V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
VGS=10V, ID=2.5A
VDS=25V,VGS=0V, f=1.0MHZ
VDD=300V,ID=5.0A, RG=25Ω
(Note 2,3)
VDS=480V,ID=5.0A, VGS=10V
(Note 2,3)
Min.
600
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
--
Max.
--
1.0
±100
4.0
1.88 2.15
479.8 --
62.7 --
2.1
--
14.93 --
28.40 --
28.27 --
21.73 --
9.27 --
2.79 --
3.37 --
Unit
V
µA
nA
V
Ω
pF
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.2
2011.09.13
Page 2 of 10
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