2SC3652 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SC3652

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC3652

Silicon NPN Epitaxial

Application

High frequency amplifier

Outline

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Note: 1. Value at TC = 25°C

Symbol

VCBO

VCEO

VEBO

IC

I C(peak)

PC

PC * 1

Tj

Tstg

Ratings

Unit

30

V

20

V

3.5

V

0.3

A

0.5

A

0.8

W

5

W

150

°C

–55 to +150

°C

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