2SC3652 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SC3652

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC3652

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to emitter breakdown V(BR)CEO 20

—

voltage

Collector cutoff current

I CBO

—

—

Emitter cutoff current

I EBO

—

—

DC current transfer ratio

hFE

40

—

Base to emitter voltage

VBE

—

—

Collector to emitter saturation VCE(sat)

—

—

voltage

Gain bandwidth product

fT

—

1.2

Collector output capacitance Cob

—

5

Input capacitance

Cib

—

10

Note: 1. Pulse test

Max

—

Unit

V

Test conditions

IC = 10 mA, RBE = ∞

1

mA

1

mA

200

1.2 V

2.0 V

VCB = 25 V, IE = 0

VEB = 3 V, IC = 0

VCE = 5 V, IC = 50 mA*1

VCE = 5 V, IC = 300 mA*1

IC = 300 mA, IB = 60 mA*1

—

GHz VCE = 5 V, IC = 100 mA*1

—

pF

VCB = 10 V, IE = 0, f = 1 MHz

—

pF

VEB = 2 V, IC = 0, f = 1 MHz

2

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