BCX55-16E6327(2011) 데이터 시트보기 (PDF) - Infineon Technologies

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BCX55-16E6327
(Rev.:2011)

NPN Silicon AF Transistors

Infineon Technologies 

BCX54 ...- BCX56...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0 , BCX54

IC = 10 mA, IB = 0 , BCX55

IC = 10 mA, IB = 0 , BCX56

V(BR)CEO

45

-

60

-

80

-

V

-

-

-

Collector-base breakdown voltage

IC = 100 µA, IE = 0 , BCX54

IC = 100 µA, IE = 0 , BCX55

IC = 100 µA, IE = 0 , BCX56

V(BR)CBO

45

-

-

60

-

-

100 -

-

Emitter-base breakdown voltage

V(BR)EBO 5

-

-

IE = 10 µA, IC = 0

Collector-base cutoff current

ICBO

µA

VCB = 30 V, IE = 0

-

-

0.1

VCB = 30 V, IE = 0 , TA = 150 °C

-

-

20

DC current gain1)

hFE

-

IC = 5 mA, VCE = 2 V

25

-

-

IC = 150 mA, VCE = 2 V, BCX55/BCX56

40

- 250

IC = 150 mA, VCE = 2 V, BCX55-10/BCX56-10

63 100 160

IC = 150 mA, VCE = 2 V, BCX54-16...BCX56-16

100 160 250

IC = 500 mA, VCE = 2 V

25

-

-

Collector-emitter saturation voltage1)

IC = 500 mA, IB = 50 mA

Base-emitter voltage-

IC = 500 mA, VCE = 2 V

VCEsat

-

VBE(ON)

-

-

0.5 V

-

1

AC Characteristics

Transition frequency

IC = 50 mA, VCE = 10 V, f = 20 MHz

fT

- 100 - MHz

1Pulse test: t < 300µs; D < 2%

3

2011-09-19

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