BCX56 데이터 시트보기 (PDF) - Philips Electronics
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BCX56 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN medium power transistors
Product specification
BCX54; BCX55; BCX56
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VCEsat
VBE
fT
hh----FF---EE---12-
DC current gain
BCX54-10; 55-10; 56-10
BCX54-16; 55-16; 56-16
collector-emitter saturation
voltage
base-emitter voltage
transition frequency
DC current gain ratio of the
complementary pairs
CONDITIONS
MIN.
IE = 0; VCB = 30 V
−
IE = 0; VCB = 30 V; Tj = 125 °C
−
IC = 0; VEB = 5 V
−
VCE = 2 V; (see Fig.2)
IC = 5 mA
40
IC = 150 mA
63
IC = 500 mA
25
IC = 150 mA; VCE = 2 V; (see Fig.2)
63
100
IC = 500 mA; IB = 50 mA
−
TYP.
−
−
−
MAX. UNIT
100 nA
10 µA
100 nA
−
−
−
250
−
−
−
160
−
250
−
0.5 V
IC = 500 mA; VCE = 2 V
−
IC = 10 mA; VCE = 5 V; f = 100 MHz −
IC = 150 mA; VCE = 2 V
−
−
1
130 −
1.3 1.6
V
MHz
160
handbook, full pagewidth
hFE
120
80
40
0
10−1
VCE = 2 V
MBH729
1
10
102
Fig.2 DC current gain; typical values.
IC (mA)
103
1999 Apr 19
4
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