IPS511E 데이터 시트보기 (PDF) - International Rectifier

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IPS511E

FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH

International Rectifier 

IPS511E

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters

are referenced to GROUND lead. (Tj = 25oC unless otherwise specified).

Symbol Parameter

Min.

Vout

Voffset

Vin

Vcc max

Iin, max.

Vdg

Maximum output voltage

Vcc-50

Maximum logic ground to load ground offset Vcc-50

Maximum Input voltage

-0.3

Maximum Vcc voltage

—

Maximum IN current

-5

Maximum diagnostic output voltage

-0.3

Idg, max Maximum diagnostic output current

-1

Isd cont. Diode max. permanent current (1)

—

Isd pulsed Diode max. pulsed current (1)

—

ESD1 Electrostatic discharge voltage (Human Body) —

ESD2

Pd

Electrostatic discharge voltage (Machine Model) —

Maximum power dissipation(1)

—

Tj max. Max. storage & operating junction temp.

-40

Tlead

Lead temperature (soldering 10 seconds)

—

Max.

Vcc+0.3

Vcc+0.3

5.5

50

10

5.5

10

2.2

10

4

0.5

20

+150

300

Units

V

mA

V

mA

A

kV

W

oC

Test Conditions

C=100pF, R=1500Ω,

C=200pF, R=0Ω, L=10µH

Thermal Characteristics

Symbol Parameter

Rth 1

Rth 2

Thermal resistance junction to case

Thermal resistance junction to ambient

Min.

—

—

Typ. Max. Units Test Conditions

6.25

90

— oC/W

—

(1) Limited by junction temperature (pulsed current limited also by internal wiring)

2

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