MCR12DSM 데이터 시트보기 (PDF) - Motorola => Freescale
부품명
상세내역
제조사
MCR12DSM Datasheet PDF : 6 Pages
| |||
MCR12DSM MCR12DSN
10
10
RGK = 1.0 KW
1.0
1.0
RGK = 1.0 KW
0.1
–40 –25 –10 5.0 20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95 110
Figure 7. Typical Holding Current versus
Junction Temperature
0.1
–40 –25
–10 5.0 20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95 110
Figure 8. Typical Latching Current versus
Junction Temperature
10
TJ = 25°C
8.0
6.0
IGT = 25 mA
4.0
m 2.0 IGT = 10 A
0
100
1000
10 K
RGK, GATE–CATHODE RESISTANCE (OHMS)
Figure 9. Holding Current versus
Gate–Cathode Resistance
1000
400 V
100
600 V
VPK = 800 V
10
TJ = 110°C
1000
100
70°C
90°C
TJ = 110°C
10
1.0
100
1000
RGK, GATE–CATHODE RESISTANCE (OHMS)
Figure 10. Exponential Static dv/dt versus
Gate–Cathode Resistance and Junction
Temperature
1000
VD = 800 V
TJ = 110°C
m 100 IGT = 25 A
IGT = 10 mA
10
1.0
100
1000
RGK, GATE–CATHODE RESISTANCE (OHMS)
Figure 11. Exponential Static dv/dt versus
Gate–Cathode Resistance and Peak Voltage
1.0
100
1000
RGK, GATE–CATHODE RESISTANCE (OHMS)
Figure 12. Exponential Static dv/dt versus
Gate–Cathode Resistance and Gate Trigger
Current Sensitivity
4
Motorola Thyristor Device Data
Share Link: 