75N08 데이터 시트보기 (PDF) - TY Semiconductor
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75N08 Datasheet PDF : 4 Pages
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MOSFICET
Product specification
75N08
■ Typical Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
* Notes :
1. V = 0 V
GS
2. I = 250 µA
D
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
* Notes :
1. V = 10 V
GS
2. I = 37.5 A
D
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 10. Maximum Drain Current
vs. Case Temperature
103
102
101
Operation in This Area
is Limited by R
DS(on)
10 µs
100 µs
1ms
10ms
100ms
DC
100
10-1
10-2
100
* Notes :
1. T = 25 oC
C
2. T = 150 oC
J
3. Single Pulse
101
102
V , Drain-SourceVoltage[V]
DS
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
T , Case Temperature [oC]
C
100
D = 0 .5
1 0 -1
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
s in g le p u ls e
? N o te s :
1 . Z (t) = 1 .1 0C /W M a x.
? JC
2 . D u ty F a c to r, D = t /t
12
3 . T - T = P * Z (t)
JM
C
DM
? JC
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t , S q u a re W a v e P u ls e D u ra tio n [s e c ]
1
Figure 11. Transient Thermal Response Curve
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