BC177 데이터 시트보기 (PDF) - STMicroelectronics
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BC177 Datasheet PDF : 6 Pages
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BC177 - BC177B
THERMAL DATA
Rthj-case Thermal Resistance Junction-Case
Rthj-amb Thermal Resistance Junction-Ambient
Max
Max
200
oC/W
500
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICES Collector Cut-off
Current (VBE = 0)
VCE =-20 V
VCE =-20 V
TC = 150 oC
-1 -100 nA
-10
µA
V(BR)CES Collector-Emitter
IC = -10 µA
-50
V
Breakdown Voltage
(VBE = 0)
) V(BR)CEO∗ Collector-Emitter
t(s Breakdown Voltage
(IB = 0)
roduc ) V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
P t(s VCE(sat)∗ Collector-Emitter
Saturation Voltage
IC = -2 mA
IE = -10 µA
IC = -10 mA IB = -0.5 mA
IC = -100 mA IB = -5 mA
lete uc VBE(sat)∗ Base-Emitter
d Saturation Voltage
IC = -10 mA IB = -0.5 mA
IC = -100 mA IB = -5 mA
so ro VBE(on)∗ Base-Emitter On
b P Voltage
IC = -2 mA
VCE = -5 V
- O te hfe∗ Small Signal Current IC = -2 mA VCE = -5 V f = 1KHz
Gain
for BC177
) le for BC177B
t(s so fT
Transition Frequency IC = -10 mA VCE = -5 V f = 100 MHz
uc Ob CCBO
Collector-Base
Capacitance
IE = 0 VCB = -10 V f = 100 KHz
d - NF Noise Figure
Pro t(s) hie
Input Impedance
IC = -0.2 mA VCE = -5 V
f = 1KHz Rg = 2KΩ B = 200Hz
IC = -2 mA VCE = -5 V f = 1KHz
te c hre
Reverse Voltage Ratio IC = -2 mA VCE = -5 V f = 1KHz
le du hoe Output Admittance
IC = -2 mA
OObbssoolete Pro ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
VCE = -5 V f = 1KHz
-45
-5
-550
125
240
-75
-200
-720
-860
-640
200
5
2
5
4
30
-250
-750
500
500
10
V
V
mV
mV
mV
mV
mV
MHz
pF
dB
KΩ
10-4
µS
2/6
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