NTE64 데이터 시트보기 (PDF) - NTE Electronics

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NTE64

Silicon NPN Transistor UHF High Speed Switch

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics

DC Current Gain

Dynamic Characteristics

hFE IC = 5mA, VCE = 5V

30 80 200

Current Gain–Bandwidth Product

fT IC = 15mA, VCE = 10V,

f = 1GHz

– 4.5 – GHz

Collector–Base Capacitance

Noise Figure

Functional Tests

Ccb VCB = 10V, IE = 0, f = 1MHz

– 0.4 1.0 pF

NF IC = 5mA, VCE = 6V, f = 1GHz – 2.0 2.5 dB

Common–Emitter Amplifier Power Gain Gpe VCC = 6V, IC = 5mA, f = 1GHz 10 12 – dB

Third Order Intercept

IC = 5mA, VCE = 6V,

f = 0.9GHz

– +23 – dBm

.075 (1.9) Min

C

Seating Plane

.770

(19.5)

Max

E

E

.325

(8.27)

Max

B

.190

(4.83)

Dia

.036 (0.92)

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