SUF2001 데이터 시트보기 (PDF) - Kodenshi Auk Co., LTD
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SUF2001 Datasheet PDF : 13 Pages
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SUF2001
Dual N and P-channel Trench MOSFET
30V Dual N- and P-channel Trench MOSFET
Features
Low VGS(th): VGS(th)=1.0~3.0V
Small footprint due to small package
Low RGDS(on): N-ch, RDS(on)=24mΩ (@ VGS=10V, ID=2.9A)
P-ch, RDS(on)=66mΩ (@ VGS=-10V, ID=-2.7A)
Ordering Information
Part Number
Marking Code
Package
SUF2001
SUF2001
SOP-8
SOP-8
Marking Information
SUF2001
YWW
Column 1: Device Code
Column 2: Production Information
-. Y: Year Code
-. WW: Week Code
Absolute maximum ratings (TA=25C unless otherwise noted)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (Pulsed) *
Total power dissipation **
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive) ①
Repetitive avalanche energy ①
Junction temperature
Storage temperature range
Thermal resistance junction to ambient
* Limited by maximum junction temperature
** Device mounted on a glass-epoxy board
Rev. date: 13-MAR-13
Symbol
VDSS
VGSS
ID
IDP
PD
IAS
EAS
IAR
EAR
TJ
Tstg
Rth(J-A)
KSD-T7F002-001
Rating
N-Ch
P-Ch
30
-30
20
5.8
-5.3
23.2
-21.2
5.8 ②
72 ②
2
-5.3 ⑥
33 ⑥
5.8
-5.3
3.4
1.6
150
-55~150
62.5
Unit
V
V
A
A
W
A
mJ
A
mJ
C
C/W
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