SUF2001 데이터 시트보기 (PDF) - Kodenshi Auk Co., LTD
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SUF2001 Datasheet PDF : 13 Pages
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P-channel MOSFET Electrical Characteristics
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance ⑧
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time ⑦⑧
Rise time ⑦⑧
Turn-off delay time ⑦⑧
Fall time ⑦⑧
Total gate charge ⑦⑧
Gate-source charge ⑦⑧
Gate-drain charge ⑦⑧
Symbol
Test Condition
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Ciss
Coss
Crss
ID=250A, VGS=0
ID=250A, VDS=VGS
VDS=-30V, VGS=0V
VDS=0V, VGS=20V
VGS=-10V, ID=-2.7A
VGS=-5.0V, ID=-2.7A
VDS=-5V, ID=-5.3A
VGS=0V, VDD=-10V,
f=1MHz
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS=-15V, ID=-5.3A
RG=10Ω
VDS=-15V, VGS=-5V
ID=-5.3A
SUF2001
Min.
-30
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ. Max. Unit
-
-
V
-
-3.0 V
-
1
A
-
100 nA
66
72 m
77
83 m
11
-
S
390 590
97 150 pF
37
60
1.2
-
1.1
-
ns
2.5
-
1.1
-
4.7 7.0
1.4 2.1 nC
1.7 2.5
Source-Drain Diode Ratings and Characteristics
Characteristic
Source current
Source current (Pulsed) ⑤
Forward voltage ⑧
Reverse recovery time
Reverse recovery charge
Symbol
Test Condition
IS
Integral reverse diode
ISM
in the MOSFET
VSD
VGS=0V, IS=-1.5A
trr
Is=-1.5A
Qrr
diS/dt=100A/us
Min Typ Max Unit
-
-
-1.5
A
-
-
-6.0
-
-
-1.2
V
-
90
-
ns
-
0.5
-
uC
Note ;
⑤ Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
⑥ L=2.0mH, IAS=-5.0A, VDD=-15V, RG=25Ω
⑦ Pulse Test : Pulse Width＜ 300us, Duty cycle≤2%
⑧ Essentially independent of operating temperature
Rev. date: 13-MAR-13
KSD-T7F002-001
www.auk.co.kr
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