2SK3813 데이터 시트보기 (PDF) - Renesas Electronics
부품명
상세내역
제조사
2SK3813 Datasheet PDF : 10 Pages
| |||
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3813
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3813 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super low on-state resistance
RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 30 A)
RDS(on)2 = 7.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A)
• Low C iss: C iss = 5500 pF TYP.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3813
TO-251 (MP-3)
2SK3813-Z
TO-252 (MP-3Z)
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
±60
A
ID(pulse)
±240
A
Total Power Dissipation (TC = 25°C)
PT1
84
W
Total Power Dissipation (TA = 25°C)
PT2
1.0
W
Channel Temperature
Storage Temperature
Single Avalanche Energy Note2
Repetitive Avalanche Current Note3
Repetitive Avalanche Energy Note3
Tch
150
°C
Tstg
−55 to +150
°C
EAS
137
mJ
IAR
37
A
EAR
137
mJ
(TO-252)
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
3. Tch(peak) ≤ 150°C, RG = 25 Ω
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16739EJ3V0DS00 (3rd edition)
Date Published August 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2004
Share Link: 