2SK3813 데이터 시트보기 (PDF) - Renesas Electronics
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2SK3813 Datasheet PDF : 10 Pages
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
9
8
7
6
5
4
3
2
1
0
-75
VGS = 4.5 V
10 V
ID = 30 A
Pulsed
-25
25
75 125 175
Tch - Channel Temperature - °C
1000
100
10
SWITCHING CHARACTERISTICS
VDD = 20 V
VGS = 10 V
RG = 0 Ω
td(of f )
td( on)
tf
tr
1
0.1
1000
1
10
100
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
VGS = 10 V
0V
10
1
0.1
0.01
0
Pulsed
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
2SK3813
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
1000
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
100
10
0.01
0.1
1
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
35
14
ID = 60 A
30
12
VDD = 32 V
25
20 V
10
8V
20
8
15
6
VGS
10
4
5
VDS
2
0
0
0
20
40
60
80 100
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
0.1
di/dt = 100 A/μs
VGS = 0 V
1
10
100
IF - Diode Forward Current - A
Data Sheet D16739EJ3V0DS
5
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