2SK3813 데이터 시트보기 (PDF) - Renesas Electronics

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2SK3813

SWITCHING N-CHANNEL POWER MOS FET

Renesas Electronics 

2SK3813

PACKAGE DRAWINGS (Unit: mm)

1) TO-251 (MP-3)

6.5 ±0.2

5.0 ±0.2

4

2.3 ±0.2

0.5 ±0.1

123

1.1 ±0.2

2.3 2.3

0.5

+0.2

−0.1

0.5

+0.2

−0.1

1. Gate

2. Drain

3. Source

4. Fin (Drain)

EQUIVALENT CIRCUIT

Drain

Gate

Body

Diode

<R> 2) TO-252 (MP-3Z)

6.5 ±0.2

5.0 ±0.2

4.4 ±0.2

4

Note

2.3 ±0.2

0.5 ±0.1

Note

123

2.3 ±0.3

0.5 ±0.1

2.3 ±0.3

0.5 ±0.1

0.15 ±0.15

1. Gate

2. Drain

3. Source

4. Fin (Drain)

Note The depth of notch at the top of the fin is

from 0 to 0.2 mm.

Source

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately

degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible,

and quickly dissipate it once, when it has occurred.

Data Sheet D16739EJ3V0DS

7

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