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MCP6S91 데이터 시트보기 (PDF) - Microchip Technology

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MCP6S91 Datasheet PDF : 40 Pages
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MCP6S91/2/3
AC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VREF = VSS, G = +1 V/V,
Input = CH0 = (0.3V)/G, CH1 = 0.3V, RL = 10 kto VDD/2, CL = 60 pF, SI and SCK are tied low and CS is tied high.
Parameters
Sym Min
Typ
Max Units
Conditions
Frequency Response
-3 dB Bandwidth
BW
1 to 18
MHz All gains; VOUT < 100 mVP-P (Note 1)
Gain Peaking
GPK
0
dB All gains; VOUT < 100 mVP-P
Total Harmonic Distortion plus Noise
f = 20 kHz, G = +1 V/V THD+N —
f = 20 kHz, G = +1 V/V THD+N —
0.0011
0.0089
% VOUT = 1.5V ± 1.0 VPK, VDD = 5.0V,
BW = 80 kHz, RL = 10 kto 1.5V
% VOUT = 2.5V ± 1.0 VPK, VDD = 5.0V,
BW = 80 kHz
f = 20 kHz, G = +4 V/V THD+N —
0.0045
% VOUT = 2.5V ± 1.0 VPK, VDD = 5.0V,
BW = 80 kHz
f = 20 kHz, G = +16 V/V THD+N —
0.028
% VOUT = 2.5V ± 1.0 VPK, VDD = 5.0V,
BW = 80 kHz
Step Response
Slew Rate
SR
4.0
— V/µs G = 1, 2
11
— V/µs G = 4, 5, 8, 10
22
— V/µs G = 16, 32
Noise
Input Noise Voltage
Eni
4.5
— µVP-P f = 0.1 Hz to 10 Hz (Note 2)
30
f = 0.1 Hz to 200 kHz (Note 2)
Input Noise Voltage Density
eni
10
— nV/Hz f = 10 kHz (Note 2)
Input Noise Current Density
ini
4
— fA/Hz f = 10 kHz
Note 1: See Table 4-1 for a list of typical numbers and Figure 2-25 for the frequency response versus gain.
2: Eni and eni include ladder resistance noise. See Figure 2-12 for eni versus G data.
2004 Microchip Technology Inc.
DS21908A-page 4

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