DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

INA-02100 데이터 시트보기 (PDF) - HP => Agilent Technologies

부품명
상세내역
제조사
INA-02100
HP
HP => Agilent Technologies HP
INA-02100 Datasheet PDF : 3 Pages
1 2 3
INA-02100 Absolute Maximum Ratings
Parameter
Device Current
Absolute Maximum[1]
50 mA
Thermal Resistance[2]:
θjc = 60°C/W
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
400 mW
+13 dBm
200°C
–65 to 200°C
INA-02100 Electrical Specifications[1,3], TA = 25°C
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TMounting Surface (TMS) = 25°C
3. Derate at 16.7 mW/°C for TMS >
176°C.
Symbol
Parameters and Test Conditions[2]: Id = 35 mA, ZO = 50
Units Min. Typ. Max.
GP
Power Gain (|S21| 2)
GP
Gain Flatness
f = 0.5 GHz
dB
31.5
f = 0.1 to 1.0 GHz
dB
± 1.5
f3 dB
ISO
3 dB Bandwidth
Reverse Isolation (|S12| 2)
GHz
1.0
f = 0.01 to 1.0 GHz
dB
39
VSWR
Input VSWR
Output VSWR
f = 0.01 to 1.0 GHz
f = 0.01 to 1.0 GHz
1.4:1
1.5:1
NF
50 Noise Figure
f = 0.5 GHz
dB
2.0
P1 dB Output Power at 1 dB Gain Compression
f = 0.5 GHz
dBm
11
IP3
Third Order Intercept Point
f = 0.5 GHz
dBm
23
tD
Group Delay
f = 0.5 GHz
psec
350
Vd
dV/dT
Device Voltage
Device Voltage Temperature Coefficient
V
4.0
mV/°C
5.5 7.0
+10
Notes:
1. The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current
is on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer.
3. The values are the achievable performance for the INA-02100 mounted in a 70 mil stripline package.
INA-02100 Typical Scattering Parameters[1] (ZO = 50 , TA = 25°C, Id = 5 mA)
Freq.
S11
S21
S12
S22
GHz
Mag
Ang
dB Mag Ang
dB Mag Ang
Mag Ang
k
0.01
0.06
–4 32.5 42.1 –2 –39.3 .011 14
0.05
0.05
–8 32.5 42.0 –8 –39.4 .011 12
0.10
0.03
–46 32.3 41.3 –16 –37.9 .013 6
0.20
0.02
–52 31.8 39.0 –30 –39.2 .011 –4
0.30
0.01
–46 31.1 36.2 –43 –38.8 .011 –12
0.40
0.02
–44 30.4 33.3 –55 –40.4 .010 –2
0.50
0.03
–35 29.7 30.7 –65 –39.3 .011 –17
0.60
0.06
–29 29.0 28.4 –74 –39.5 .011 –5
0.80
0.10
–41 27.9 24.8 –92 –38.1 .012 –9
1.00
0.17
–60 26.9 22.0 –108 –36.4 .015 –19
1.20
0.24
–73 26.0 19.9 –124 –35.5 .017 –16
1.40
0.30
–89 25.1 18.0 –141 –34.1 .020 –16
1.60
0.37 –103
24.1 16.0 –157 –32.6 .023 –30
1.80
0.42 –116
22.9 14.0 –174 –33.1 .022 –28
2.00
0.46 –128
21.5 12.0 171 –31.4 .027 –31
2.50
0.50 –146
18.3 8.2 142 –29.3 .034 –44
3.00
0.51 –162
14.6 5.4 116 –28.5 .038 –47
.20
–1 1.27
.20
1 1.28
.20
–1 1.17
.21
3 1.33
.22
4 1.36
.24
2 1.63
.26
–1 1.56
.28
–4 1.67
.32 –14 1.58
.34 –26 1.41
.36 –40 1.32
.38 –60 1.17
.32 –91 1.19
.26 –111 1.29
.22 –122 1.25
.19 –148 1.34
.15 178 1.83
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
MODELS section of the Communications Components Designer’s Catalog.
6-91

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]