K4B4G1646Q 데이터 시트보기 (PDF) - Samsung

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K4B4G1646Q

4Gb Q-die DDR3L SDRAM Olny x16 96FBGA with Lead-Free & Halogen-Free (RoHS compliant) 1.35V

Samsung 

K4B4G1646Q

datasheet

Preliminary Rev. 0.5

DDR3L SDRAM

9.6 Overshoot/Undershoot Specification

9.6.1 Address and Control Overshoot and Undershoot specifications

[ Table 24 ] AC overshoot/undershoot specification for Address and Control pins (A0-A12, BA0-BA2. CS. RAS. CAS. WE. CKE, ODT)

Parameter

DDR3-800

Specification

DDR3-1066 DDR3-1333

1.35V

Maximum peak amplitude allowed for overshoot area (See Figure 8)

0.4

0.4

0.4

Maximum peak amplitude allowed for undershoot area (See Figure 8)

0.4

0.4

0.4

Maximum overshoot area above VDD (See Figure 8)

0.67

0.5

0.4

Maximum undershoot area below VSS (See Figure 8)

0.67

0.5

0.4

1.5V

Maximum peak amplitude allowed for overshoot area (See Figure 8)

0.4

0.4

0.4

Maximum peak amplitude allowed for undershoot area (See Figure 8)

0.4

0.4

0.4

Maximum overshoot area above VDD (See Figure 8)

0.67

0.5

0.4

Maximum undershoot area below VSS (See Figure 8)

0.67

0.5

0.4

(A0-A15, BA0-BA3, CS#, RAS#, CAS#, WE#, CKE, ODT)

DDR3-1600

0.4

0.4

0.33

0.33

0.4

0.4

0.33

0.33

Unit

V

V

V-ns

V-ns

V

V

V-ns

V-ns

NOTE :

1. The sum of the applied voltage (VDD) and peak amplitude overshoot voltage is not to exceed absolute maximum DC ratings

2. The sum of applied voltage (VDD) and the peak amplitude undershoot voltage is not to exceed absolute maximum DC ratings

Maximum Amplitude

Overshoot Area

Volts VDD

(V)

VSS

Maximum Amplitude

Time (ns)

Undershoot Area

Figure 8. Address and Control Overshoot and Undershoot Definition

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