2SD2012-TO-220-3L 데이터 시트보기 (PDF) - TY Semiconductor
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2SD2012-TO-220-3L Datasheet PDF : 1 Pages
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Product specification
TO-220-3L Plastic-Encapsulate Transistors
2SD2012 TRANSISTOR (NPN)
FEATURES
z High DC Current Gain
z Low Saturation Voltage
z High Power Dissipation
TO-220-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
60
7
3
2
63
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
*Pulse test
Symbol
V(BR)CBO
V(BR)CEO*
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE
Cob
fT
Test conditions
IC=100µA,IE=0
IC=50mA,IB=0
IE=100µA,IC=0
VCB=60V,IE=0
VEB=7V,IC=0
VCE=5V, IC=0.5A
VCE=5V, IC=2A
VCE=5V, IC=3A
IC=2A,IB=0.2A
VCE=5V, IC=0.5A
VCB=10V,IE=0, f=1MHz
VCE=5V,IC=0.5A
Min Typ Max Unit
60
V
60
V
7
V
100
μA
100
μA
100
320
20
60
1
V
1
V
35
pF
3
MHz
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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