HYM324020GS-70 데이터 시트보기 (PDF) - Infineon Technologies
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HYM324020GS-70 Datasheet PDF : 9 Pages
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4M x 32-Bit Dynamic RAM Module
HYM 324020S/GS-60/-70
Preliminary Information
• 4 194 304 words by 32-bit organization
(alternative 8 388 608 words by 16-bit)
• Fast access and cycle time
60 ns access time
110 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
• Fast page mode capability
40 ns cycle time (-60 version)
45 ns cycle time (-70 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 4840 mW active
(HYM 324020S/GS-60)
max. 4400 mW active
(HYM 324020S/GS-70)
CMOS – 44 mW standby
TTL – 88 mW standby
• CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
• 8 decoupling capacitors mounted on
substrate
• All inputs, outputs and clocks fully TTL
compatible
• 72 pin Single in-Line Memory Module with
22.86 mm (900 mil) height
• Utilizes eight 4Mx4-DRAMs in 300mil wide
SOJ-packages
• 2048 refresh cycles / 32 ms
• Tin-Lead contact pads (S - version)
• Gold contact pads (GS - version)
Ordering Information
Type
HYM 324020S-60
Ordering Code
Q67100-Q979
Package
L-SIM-72-12
HYM 324020S-70
Q67100-Q980 L-SIM-72-12
HYM 324020GS-60
Q67100-Q2005 L-SIM-72-12
HYM 324020GS-70
on request
L-SIM-72-12
Semiconductor Group
571
Description
DRAM Module
(access time 60 ns)
DRAM Module
(access time 70 ns)
DRAM Module
(access time 60 ns)
DRAM Module
(access time 70 ns)
09.94
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