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MJE340(1997) 데이터 시트보기 (PDF) - STMicroelectronics
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MJE340
(Rev.:1997)
COMPLEMETARY SILICON POWER TRANSISTORS
STMicroelectronics
MJE340 Datasheet PDF : 5 Pages
1
2
3
4
5
MJE340 / MJE350
THERMAL DATA
R
thj-ca se
Thermal Resist ance Junction-case
Max
6.0
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= 300 V
I
EBO
Emitt er Cut-off Current V
EB
= 3 V
(I
C
= 0)
V
CEO(sus )
∗
Collect or-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 1 mA
h
FE
DC Current G ain
I
C
= 50 mA
∗
Pulsed: Pulse duration = 300
µ
s, duty cycle
≤
2%
V
CE
= 10 V
Min.
300
30
Typ .
M a x.
100
100
240
Unit
µ
A
µ
A
V
Safe Operating Area
Derating Curve
2/5
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