BD142 데이터 시트보기 (PDF) - SavantIC Semiconductor

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BD142

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

BD142

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=200mA ;IB=0

V(BR)CBO Collector-base breakdown voltage

IC=1mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.4A

VBE

Base-emitter on voltage

IC=4A;VCE=4V

ICEX

Collector cut-off current

VCE=100V;VBE=-1.5V

IEBO

Emitter cut-off current

VEB=7V; IC=0

hFE-1

DC current gain

IC=4A ; VCE=4V

hFE-2

DC current gain

IC=0.5A ; VCE=4V

MIN TYP. MAX UNIT

45

V

45

V

7

V

1.1

V

1.5

V

2

mA

1

mA

12.5

160

20

2

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