M5M51008CFP-55HI 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC
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M5M51008CFP-55HI Datasheet PDF : 7 Pages
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ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Vcc
Supply voltage
VI
Input voltage
VO
Output voltage
Pd
Power dissipation
Topr
Operating temperature
Tstg
Storage temperature
* –3.0V in case of AC ( Pulse width ≤ 50ns )
MITSUBISHI LSIs
M5M51008CP,FP,VP,RV,KV,KR -55HI, -70HI,
-55XI, -70XI
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
Conditions
With respect to GND
Ta=25°C
Ratings
– 0.3*~7
– 0.3*~Vcc + 0.3
0~Vcc
700
– 40~85
– 65~150
Unit
V
V
V
mW
°C
°C
DC ELECTRICAL CHARACTERISTICS (Ta=– 40~85°C, Vcc=5V±10%, unless otherwise noted)
Symbol
Parameter
VIH
High-level input voltage
Test conditions
Limits
Unit
Min
Typ
Max
2.2
Vcc + 0.3
V
VIL
Low-level input voltage
–0.3*
0.8
V
IOH= –1.0mA
VOH
High-level output voltage
IOH= –0.1mA
2.4
V
Vcc – 0.5
V
VOL
Low-level output voltage IOL=2mA
0.4
V
II
Input current
VI=0~Vcc
±1
µA
IO
Output current in off-state
S1=VIH or S2=VIL or OE=VIH
VI/O=0~VCC
±1
µA
ICC1
Active supply current
(AC, MOS level)
S1 ≤ VCC–0.2V, S2 ≥ VCC–0.2V
other inputs ≤ 0.2V or ≥ VCC–0.2V
Output-open(duty 100%)
55ns
70ns
1MHz
80
70
mA
15
ICC2
Active supply current
(AC, TTL level)
S1=VIL,S2=VIH,
other inputs=VIH or VIL
Output-open(duty 100%)
55ns
70ns
1MHz
85
70
mA
15
~25°C
2
ICC3
Stand-by current
1) S2 ≤ 0.2V,
other inputs=0~VCC
2) S1 ≥ VCC–0.2V,
S2 ≥ VCC–0.2V,
other inputs=0~VCC
~40°C
-HW
~70°C
~85°C
~25°C
~40°C
-XW
~70°C
6
20
40
µA
1
3
8
~85°C
16
ICC4
Stand-by current
S1=VIH or S2=VIL,
other inputs=0~VCC
3
mA
* –3.0V in case of AC ( Pulse width ≤ 50ns )
CAPACITANCE (Ta=– 40~85°C, Vcc=5V±10% unless otherwise noted)
Symbol
Parameter
CI
Input capacitance
CO
Output capacitance
Note 1: Direction for current flowing into an IC is positive (no mark).
2: Typical value is Vcc = 5V, Ta = 25°C
Test conditions
VI=GND, VI=25mVrms, f=1MHz
VO=GND,VO=25mVrms, f=1MHz
Limits
Min Typ Max
Unit
6
pF
10
pF
MITSUBISHI
3
ELECTRIC
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