MITSUBISHI LSIs
M5M51008CP,FP,VP,RV,KV,KR -55HI, -70HI,
-55XI, -70XI
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
POWER DOWN CHARACTERISTICS
(1) ELECTRICAL CHARACTERISTICS (Ta=– 40~85°C, unless otherwise noted)
Symbol
VCC (PD)
VI (S1)
Parameter
Power down supply voltage
Chip select input S1
VI (S2)
Chip select input S2
Test conditions
2.2V≤Vcc(PD)
2V≤Vcc(PD)≤2.2V
4.5V≤Vcc(PD)
Vcc(PD)<4.5V
Limits
Min Typ Max
Unit
2.0
V
2.2
V
Vcc(PD)
0.8
V
0.2
~25°C
1
ICC (PD) Power down supply current
VCC = 3V
1) S2 ≤ 0.2V,
other inputs = 0~3V
2) S1 ≥ VCC–0.2V,
S2 ≥ VCC–0.2V
other inputs = 0~3V
-HI ~40°C
~70°C
~85°C
~25°C
~40°C
-XI
~70°C
3
10
20
µA
0.5
1.5
4
~85°C
8
(2) TIMING REQUIREMENTS (Ta=– 40~85°C, unless otherwise noted )
Symbol
tsu (PD)
trec (PD)
Parameter
Power down set up time
Power down recovery time
Test conditions
Limits
Min Typ Max
Unit
0
ns
5
ms
(3) POWER DOWN CHARACTERISTICS
S1 control mode
VCC
t su (PD)
2.2V
S1
S2 control mode
VCC
S2
t su (PD)
0.2V
4.5V
4.5V
S1 ≥ VCC – 0.2V
t rec (PD)
2.2V
4.5V
4.5V
t rec (PD)
S2 ≤ 0.2V
0.2V
MITSUBISHI
7
ELECTRIC