SMK0965FJ 데이터 시트보기 (PDF) - Kodenshi Auk Co., LTD

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SMK0965FJ

Advanced N-Ch Power MOSFET

Kodenshi Auk Co., LTD 

SMK0965FJ

Electrical Characteristics (TC=25C unless otherwise noted)

Characteristic

Symbol

Test Condition

Drain-source breakdown voltage

BVDSS

ID=250uA, VGS=0V

Gate threshold voltage

VGS(th)

ID=250uA, VDS=VGS

Drain-source cut-off current

IDSS

VDS=650V, VGS=0V

Gate leakage current

IGSS

VDS=0V, VGS=30V

Drain-source on-resistance

④

RDS(on)

VGS=10V, ID=4.5A

Forward transfer conductance ④

gfs

VDS=10V, ID=4.5A

Input capacitance

Output capacitance

Reverse transfer capacitance

Ciss

Coss

Crss

VGS=0V, VDS=25V

f=1 MHz

Turn-on delay time

Rise time

Turn-off delay time

td(on)

tr

td(off)

VDD=325V, ID=9A

RG=25Ω

③④

Fall time

tf

Total gate charge

Gate-source charge

Gate-drain charge

Qg

VDS=520V, VGS=10V

Qgs

ID=9A

Qgd

③④

Min.

650

2.0

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Typ.

-

-

-

-

0.72

11

2040

153

16

23

69

144

77

35

10

9

Max.

-

4.0

1

100

0.85

-

2550

192

20

-

-

-

-

57

-

-

Unit

V

V

uA

nA



S

pF

ns

nC

Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted)

Characteristic

Symbol

Test Condition

Min. Typ. Max.

Source current (DC)

Source current (Pulsed)

IS

Integral reverse diode

①

ISM

in the MOSFET

-

-

9

-

-

36

Forward voltage

④

VSD

VGS=0V, IS=9A

-

-

1.4

Reverse recovery time

Reverse recovery charge

trr

IS=9A, VGS=0V

Qrr

dIF/dt=100A/us

-

420

-

-

4.2

-

Unit

A

V

ns

uC

Note ;

① Repetitive rating : Pulse width limited by maximum junction temperature

② L=5.7mH, IAS=9A, VDD=50V, RG=25Ω, Starting TJ=25℃

③ Pulse Test : Pulse width≤300us, Duty cycle≤2%

④ Essentially independent of operating temperature

KSD-T0O068-000

2

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