C1846 데이터 시트보기 (PDF) - Inchange Semiconductor

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C1846

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC1846

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=2mA;IB=0

V(BR)CBO Collector-base breakdown voltage

IC=1mA ;IE=0

VCEsat Collector-emitter saturation voltage IC=0.5A ;IB=50mA

ICBO

Collector cut-off current

VCB=20V; IE=0

ICEO

Collector cut-off current

VCE=20V; IB=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=0.5A ; VCE=10V

hFE-2

DC current gain

IC=1A ; VCE=5V

COB

Output capacitance

IE=0 ; VCB=10V;f=1MHz

fT

Transition frequency

IC=50mA ; VCB=10V,f=200MHz

MIN TYP. MAX UNIT

35

V

45

V

0.5

V

0.1 μA

100 μA

10 μA

85

340

50

20

pF

200

MHz

‹ hFE-1 Classifications

Q

R

S

85-170 120-240 170-340

2

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