HN58X2408FPIE 데이터 시트보기 (PDF) - Renesas Electronics

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HN58X2408FPIE

Two-wire serial interface 8k EEPROM (1-kword × 8-bit)/16k EEPROM (2-kword × 8-bit) 32k EEPROM (4-kword × 8-bit)/64k EEPROM (8-kword × 8-bit)

Renesas Electronics 

HN58X2408I/HN58X2416I/HN58X2432I/HN58X2464I

DC Operating Conditions

Parameter

Symbol Min

Typ

Supply voltage

Input high voltage

Input low voltage

Operating temperature

VCC

VSS

VIH

VIL

Topr

1.8



0

0

VCC × 0.7 

−0.3*1



−40



Note: 1. VIL (min): −1.0 V for pulse width ≤ 50 ns.

Max

5.5

0

VCC + 1.0

VCC × 0.3

+85

Unit

V

V

V

V

°C

DC Characteristics (Ta = −40 to +85°C, VCC = 1.8 V to 5.5 V)

Parameter

Symbol Min Typ Max Unit

Input leakage current

ILI



Output leakage current ILO



Standby VCC current

ISB



Read VCC current

ICC1



Write VCC current

ICC2



Output low voltage

VOL2





2.0 µA



2.0 µA

1.0 3.0 µA



1.0 mA



3.0 mA



0.4 V

VOL1





0.2 V

Test conditions

VCC = 5.5 V, Vin = 0 to 5.5 V

VCC = 5.5 V, Vout = 0 to 5.5 V

Vin = VSS or VCC

VCC = 5.5 V, Read at 400 kHz

VCC = 5.5 V, Write at 400 kHz

VCC = 4.5 to 5.5 V, IOL = 1.6 mA

VCC = 2.7 to 4.5 V, IOL = 0.8 mA

VCC = 1.8 to 2.7 V, IOL = 0.4 mA

VCC = 1.8 to 2.7 V, IOL = 0.2 mA

Capacitance (Ta = +25°C, f = 1 MHz)

Parameter

Test

Symbol Min

Typ

Max

Unit

conditions

Input capacitance (A0 to A2, SCL, WP) Cin*1 



6.0

pF

Vin = 0 V

Output capacitance (SDA)

CI/O*1





6.0

pF

Vout = 0 V

Note: 1. This parameter is sampled and not 100% tested.

Rev.5.00, Jan.14.2005, page 4 of 20

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