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SI6463DQ

P-Channel 2.5V Specified PowerTrench MOSFET

Fairchild Semiconductor 

April 2001

Si6463DQ

P-Channel 2.5V Specified PowerTrench MOSFET

General Description

This P-Channel 2.5V specified MOSFET is a rugged

gate version of Fairchild Semiconductor’s advanced

PowerTrench process. It has been optimized for power

management applications with a wide range of gate

drive voltage (2.5V – 12V).

Applications

• Load switch

• Motor drive

• DC/DC conversion

• Power management

Features

• –8.8 A, –20 V. RDS(ON) = 0.0125 Ω @ VGS = –4.5 V

RDS(ON) = 0.018 Ω @ VGS = –2.5 V

• Extended VGSS range (±12V) for battery

applications

• Low gate charge

• High performance trench technology for extremely

low RDS(ON)

• Low profile TSSOP-8 package

D

S

S

D

TSSOP-8

G

S

S

D

Pin 1

5

4

6

3

7

2

8

1

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol

Parameter

VDSS

VGSS

ID

Drain-Source Voltage

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

(Note 1)

PD

Power Dissipation

(Note 1a)

(Note 1b)

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

Ratings

–20

± 12

–8.8

–50

1.3

0.6

–55 to +150

96

208

Units

V

V

A

W

°C

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

6463

Si6463DQ

13’’

Tape width

16mm

Quantity

3000 units

2001 Fairchild Semiconductor Corporation

Si6463DQ Rev. A(W)

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