BDY58 데이터 시트보기 (PDF) - New Jersey Semiconductor
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BDY58 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
BDY58
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 100mA; IB= 0
125
V
V(BR)CBO Collector- Base Breakdown Voltage lc= 5mA ; IE= 0
160
V
V(BR)EBO Emitter-Base Breakdown Voltage
!E= 5mA ; lc= 0
10
V
VcE(sat) Collector-Emitter Saturation Voltage lc= 10A; IB= 1A
ICBO
Collector Cutoff Current
ICER
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VGB= 120V;IE=0
VCE= 80V; RBE= 1 0 Q
VOE= 80V; RBE= 10 Q ; TC=100°C
VEB= 10V;IC=0
1.4
V
0.5
mA
0.5
10
mA
0.5
mA
hpE-1
DC Current Gain
lc=10A;VCE=4V
20
80
hFE-2
DC Current Gain
lc= 20A ; VCE= 4V
15
fr
Current-Gain—Bandwidth Product lc=1A; VCE=1 5V; f= 10MHz
10
MHz
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
lc=15A, IB=1.5A,
IC=15A,IB1=-IB2=1.5A,
1.0
PS
2.0
11 S
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