2SK3652 데이터 시트보기 (PDF) - Panasonic Corporation
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2SK3652 Datasheet PDF : 4 Pages
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2SK3652
■ Electrical Characteristics (continued) TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Diode foward voltage
Reverse recovery time
Reverse recovery charge
Gate charge load
Gate-source charge
Gate-drain charge
Thermal resistance (ch-c)
Thermal resistance (ch-a)
VDSF
trr
Qrr
Qg
Qgs
Qgd
Rth(ch-c)
Rth(ch-a)
IDR = 50 A, VGS = 0
L = 230 µH, VDD = 100 V
IDR = 25 A, di/dt = 100 A/µs
VDD = 100 V, ID = 25 A
VGS = 10 V
−1.5
235
1 180
105
40
14
1.25
41.6
V
ns
nC
nC
nC
nC
°C/W
°C/W
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Safe operation area
1 000
IDP
Non repetitive pulse
TC = 25°C
100
ID
t = 100 µs
DC
10
1
t=
1 ms
t=
10 ms
t=
100 ms
10−1
1
10
100
1 000
Drain-source voltage VDS (V)
2
SJG00034AED
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