2SD1088 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD1088 Datasheet PDF : 5 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.5A ;L=40mH
VCEsat Collector-emitter saturation voltage IC=4A;IB=0.04A
VBEsat Base-emitter saturation voltage
IC=4A ;IB=0.04A
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
VCB=300V; IE=0
VEB=5V; IC=0
IC=2A ; VCE=2V
hFE-2
DC current gain
IC=4A ; VCE=2V
COB
Collector output capacitance
f=1MHz;VCB=50V
Product Specification
2SD1088
MIN TYP. MAX UNIT
250
V
2.0
V
2.5
V
0.5 mA
0.5 mA
2000
200
35
pF
2
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