MP02HBN175-10 데이터 시트보기 (PDF) - Dynex Semiconductor
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MP02HBN175-10 Datasheet PDF : 8 Pages
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MP02X175 Series
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Symbol
Parameter
Test Conditions
Max. Units
IT(AV)
I
T(RMS
ITSM
I2t
ITSM
I2t
Visol
Mean on-state current
Half wave resistive load
Tcase = 75˚C
Tcase = 85˚C
RMS value
T = 75˚C
case
Surge (non-repetitive) on-current
10ms half sine, Tj = 125˚C
I2t for fusing
V =0
R
Surge (non-repetitive) on-current
10ms half sine, Tj = 125˚C
I2t for fusing
VR = 50% VDRM
Isolation voltage
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
175 A
150 A
275 A
6.8 kA
231 x 103 A2s
5.5 kA
150 x 103 A2s
3000 V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Rth(j-c)
Thermal resistance - junction to case
(per thyristor or diode)
Rth(c-hs)
Tvj
T
stg
-
Thermal resistance - case to heatsink
(per thyristor or diode)
Virtual junction temperature
Storage temperature range
Screw torque
-
Weight (nominal)
Test Conditions
dc
Half wave
3 Phase
Mounting torque = 5Nm
with mounting compound
Reverse (blocking)
-
Mounting - M6
Electrical connections - M6
-
Min. Max. Units
-
0.19 ˚C/kW
-
0.20 ˚C/kW
-
0.21 ˚C/kW
-
0.07 ˚C/kW
-
125
˚C
–40 125
˚C
- 6 (55) Nm (lb.ins)
- 5 (44) Nm (lb.ins)
-
350
g
2/8
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