MP02HBN175-10 데이터 시트보기 (PDF) - Dynex Semiconductor
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MP02HBN175-10 Datasheet PDF : 8 Pages
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MP02X175 Series
DYNAMIC CHARACTERISTICS - THYRISTOR
Symbol
Parameter
Test Conditions
Min. Max. Units
IRRM/IDRM
dV/dt
Peak reverse and off-state current
Linear rate of rise of off-state voltage
dI/dt
Rate of rise of on-state current
At V /V , T = 125˚C
RRM DRM j
To 67% VDRM, Tj = 125˚C
From 67% VDRM to 500A,
gate source 10V, 5Ω,
-
-
Repetitive 50Hz -
30 mA
1000 V/µs
500 A/µs
t
r
=
0.5µs,
T
j
=
125˚C
VT(TO)
Threshold voltage
At Tvj = 125˚C. See note 1
-
1.05 V
rT
On-state slope resistance
At T = 125˚C. See note 1
vj
-
0.8 mΩ
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
VGT
I
GT
VGD
VFGM
VFGN
V
RGM
IFGM
PGM
PG(AV)
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
VDRM = 5V, Tcase = 25oC
VDRM = 5V, Tcase = 25oC
VDRM = 5V, Tcase = 25oC
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 5
-
Max. Units
3.0
V
150 mA
0.25 V
30
V
0.25 V
5
V
10
A
100 W
5
W
3/8
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