MP02HBN175-10 데이터 시트보기 (PDF) - Dynex Semiconductor

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MP02HBN175-10

Phase Control Dual SCR, SCR/Diode Modules

Dynex Semiconductor 

MP02X175 Series

15

2000

Measured under pulse conditions

Tj = 125˚C

180

1500

10

1000

500

140

5

I2t

100

0

0.5

1.0

1.5

2.0

2.5

Instantaneous on-state voltage, VT - (V)

Fig. 3 Maximum (limit) on-state characteristics

100

Table gives pulse power PGM in watts

Pulse Pulse Frequency Hz

Width

µs 50 100 400

VFGM 20 100 100 100

25 100 100 100

100 100 100 100

500 100 100 25

1ms 100 50 -

10 10ms 10 -

-

75W 100W

50W

10W

5W

0

60

1

10 1 2 3 4 5 10 20 30 50

ms

cycles at 50Hz

Duration

Fig. 4 Surge (non-repetitive) on-state current vs time

(Thyristor or diode with 50% VRRM at Tcase = 125˚C)

0.3

Rth(j-hs)

0.2

Rth(j-c)

Tj = 25˚C

Tj = 125˚C

1.0

0.1

VGD

0.1

0.001

0.01

0.1

1.0

Gate trigger current, IGT - (A)

Fig. 5 Gate characteristics

4/8

0

10

0.001

0.01

0.1

1.0

10

100

IFGM

Time - (s)

Fig. 6 Transient thermal impedance - dc

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