MP02TT800 데이터 시트보기 (PDF) - Dynex Semiconductor
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MP02TT800 Datasheet PDF : 8 Pages
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MP02TT800
2000
Measured under pulse conditions
20
1500
15
180
1000
10
I2t
140
Tj = 125˚C
500
5
100
0
0.5
1.0
1.5
2.0
2.5
Instantaneous on-state voltage, VT - (V)
Fig. 3 Maximum (limit) on-state characteristics
100
Pulse Pulse Frequency Table gives pulse power PGM in watts
Width
Hz
µs 50 100 400
VFGM 20 100 100 100
25 100 100 100
100 100 100 100
10
500 100
1ms 100
100
50
25
-
10ms 10 - -
75W100W
50W
10W
5W
Tj = 25˚C
Tj = 125˚C
1.0
Upper limit 99%
VGD
0
60
1
10 1 2 3 4 5 10 20 30 50
ms
cycles at 50Hz
Duration
Fig. 4 Surge (non-repetitive) on-state current vs time
(with 50% VRSM at Tcase = 125˚C)
1.0
0.1
0.01
0.1
0.001
0.01
0.1
1.0
Gate trigger current, IGT - (A)
Fig. 5 Gate characteristics
10
IFGM
0.001
0.001 0.01
0.1
1
10
Time - (s)
100 1000
Fig. 6 Transient thermal impedance - dc
4/8
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