TPV595A 데이터 시트보기 (PDF) - New Jersey Semiconductor
부품명
상세내역
제조사
TPV595A Datasheet PDF : 2 Pages
| |||
is.u ^>s.mL-(—OYiaiLci:oi
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
ati, One..
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
TPV595A
ELECTRICAL CHARACTERISTICS — continued
Characteristic
FUNCTIONAL TESTS
Common-Emitter Amplifier Smalt-Signal Gain
(VcE = 25 V, IC = 2 x 900 mA)
Load Mismatch
(VCc = 25 V, Pout = 15 W, ICQ = 2 x 900 mA, f = 470 MHz,
2 Tones, Load VSWR = oo:1. All Phase Angles)
Overdrive (no degradation)
(f0 = 470 MHz, VCE = 25 V, 2 Tones, ICQ = 2 x 900 mA)
Intermediation Distortion, 3 Tone
(f = 860 MHz, VCE •= 25 v> *CQ = 2 x 90° mA' pref - 14 W,
Vision Carrier = -8 dB, Sound Carrier = -7 dB,
Sideband Signal = -16 dB, Specification TV05001 1
Intermodulation Distortion (IDEM)
(f - 860 MHz, VCE - 25 V, ICQ - 2 x 900 mA, Pref = 14 W,
Vision Carrier = -8 dB, Sound Carrier = -10 dB,
Sideband Carrier = -16dB)
Symbol
GSSE
*
P'nover
IMD-j
Min
Typ
Max
Unit
8.5
—
—
dB
No Degradation in
Output Power
15
—
—
W
-47
dB
IMD2
-50
dB
VCE = 25 /
IC = 2 x 9 A
f = 860 Mh z
TC = 70°C
f
f
A
/
//
/
/
'
0
5
10
15
Pref. REFERENCE OUTPUT POWER (WATTS)
Figure 1. Cross-mod* versus Output Power
*Cross-mod: A% sound ( - 7 dB)
— vision O -» PEAK
6
2
k,
O
I
O2
x. \c
TC-?
^
-
4
8
12 16 20 24
VCE, COLLECTOR-EMITTER VOLTAGE IVOLTSI
Figure 3. DC Safe Operating Area
VCE - 25 V
1C - 2 x 9 A
f0 = 860 MHz
TC = 70DC
,
/
//
24
6 8 1 0 12
Pref, REFERENCE OUTPUT POWER (WATTSI
Figure 2. IMD* versus Output Power
"IMD: 3 tones -7dB, -8 dB, -16dB
i ii
NOTE; DIVIDE BY Ir;2
1000
>
LIFETI
i 100
•8,
\E V S
IN HC
\S s
\
\
100 120 140 160 180 200
Tj. JUNCTION TEMPERATURE |°C'
Figure 4. MTTF versus Junction Temperature
Quality Se^'-
Share Link: 