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SS510 데이터 시트보기 (PDF) - SUNMATE electronic Co., LTD

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SS510
SUNMATE
SUNMATE electronic Co., LTD SUNMATE
SS510 Datasheet PDF : 2 Pages
1 2
Features
· Metal-Semiconductor junction with gard ring
· Epitaxial construction
· Low forward voltage drop
· High current capability
· The plastic material carries UL recognition 94V-0
· For use in low vlotage, high frequency inverters,
ree wheeling, and polarity protection applications
Mechanical Data
· Case Molded Plastic
· Polarity:Color band denotes cathode
· Weight: 0.007 ounces,0.21 grams
SS52-SS510
5.0A Surface Mount Schottky Barrier Rectifier
B
A
C
D
J
H
G
E
SMC
Dim Min Max
A
5.59 6.22
B
6.60 7.11
C
2.75 3.18
D
0.15 0.31
E
7.75 8.13
G
0.10 0.20
H
0.76 1.52
J
2.00 2.62
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
0.375″(9.5mm) Lead Lengths
@TL=95
Peak Forward Surage Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
Maximum Forward Voltage at 5.0A DC
Maximum DC Reverse Current
at Rated DC Bolcking Voltage
@TJ=25
@TJ=100
Typical Junction Capacitance (Note1)
SYMBOL
VRRM
VRMS
VDC
SS52
20
14
20
I(AV)
IFSM
VF
IR
CJ
0.45
Typical Thermal Resistance (Note2)
R JA
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
NOTES: 1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC
2.Thermal resistance junction to ambient,
SS53
30
21
30
0.55
500
15
SS54
40
28
40
SS55
50
35
50
5.0
SS56
60
42
60
SS58
80
56
80
SS510
100
70
100
150
0.6
0.7
1.0
50
-55 to +150
-55 to +150
0.85
350
10
UNIT
V
V
V
A
A
V
mA
pF
/W
1of2

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